Cyclic PECVD of Ge2Sb2Te5 films using metallorganic sources

被引:63
作者
Choi, Byung Joon [1 ]
Choi, Seol
Shin, Yong Cheol
Hwang, Cheol Seong
Lee, Jin Wook
Jeong, Jaehack
Kim, Yoon Jung
Hwang, Sung-Yeon
Hong, Suk Kyoung
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
关键词
D O I
10.1149/1.2456199
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Ge2Sb2Te5 (GST) thin films were deposited on SiO2/Si and TiN/Si substrates by cyclic metallorganic chemical vapor deposition using Ge(i-C4H9)(4), Sb(i-C3H7)(3), Te(i-C3H7)(2) as Ge, Sb, and Te precursors, respectively, with the help of Ar+H-2 plasma at temperatures ranging from 180 to 290 degrees C. The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at 200 degrees C showed a smooth surface morphology, highest density, and lowest impurity concentration. GST film was selectively grown inside the contact hole having a TiN/W plug. (c) 2007 The Electrochemical Society.
引用
收藏
页码:H318 / H324
页数:7
相关论文
共 20 条
  • [1] Highly manufacturable high density phase change memory of 64Mb and beyond
    Ahn, SJ
    Song, YJ
    Jeong, CW
    Shin, JM
    Fai, Y
    Hwang, YN
    Lee, SH
    Ryoo, KC
    Lee, SY
    Park, JH
    Horii, H
    Ha, YH
    Yi, JH
    Kuh, BJ
    Koh, GH
    Jeong, GT
    Jeong, HS
    Kim, K
    Ryu, BI
    [J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 907 - 910
  • [2] [Anonymous], S VLSI TECHN
  • [3] Cho SL, 2005, 2005 Symposium on VLSI Technology, Digest of Technical Papers, P96
  • [4] Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
    Friedrich, I
    Weidenhof, V
    Njoroge, W
    Franz, P
    Wuttig, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 4130 - 4134
  • [5] HORII H, 2003, S VLSI TECHN
  • [6] Overview of phase-change chalcogenide nonvolatile memory technology
    Hudgens, S
    Johnson, B
    [J]. MRS BULLETIN, 2004, 29 (11) : 829 - 832
  • [7] Hwang YN, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P893
  • [8] Study of oxygen-doped GeSbTe film and its effect as an interface layer on the recording properties in the blue wavelength
    Jeong, TH
    Seo, H
    Lee, KL
    Choi, SM
    Kim, SJ
    Kim, SY
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3B): : 1609 - 1612
  • [9] Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory
    Kim, SM
    Shin, MJ
    Choi, DJ
    Lee, KN
    Hong, SK
    Park, YJ
    [J]. THIN SOLID FILMS, 2004, 469 : 322 - 326
  • [10] Lai S, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P255