Cyclic PECVD of Ge2Sb2Te5 films using metallorganic sources

被引：63

作者：

Choi, Byung Joon ^{[1
]}

Choi, Seol

Shin, Yong Cheol

Hwang, Cheol Seong

Lee, Jin Wook

Jeong, Jaehack

Kim, Yoon Jung

Hwang, Sung-Yeon

Hong, Suk Kyoung

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2007年 / 154卷 / 04期

关键词：

D O I：

10.1149/1.2456199

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ge2Sb2Te5 (GST) thin films were deposited on SiO2/Si and TiN/Si substrates by cyclic metallorganic chemical vapor deposition using Ge(i-C4H9)(4), Sb(i-C3H7)(3), Te(i-C3H7)(2) as Ge, Sb, and Te precursors, respectively, with the help of Ar+H-2 plasma at temperatures ranging from 180 to 290 degrees C. The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at 200 degrees C showed a smooth surface morphology, highest density, and lowest impurity concentration. GST film was selectively grown inside the contact hole having a TiN/W plug. (c) 2007 The Electrochemical Society.

引用

页码：H318 / H324

页数：7

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