A Wideband 2-5 GHz Noise Canceling Subthreshold Low Noise Amplifier

被引:57
作者
Kumar, A. R. Aravinth [1 ]
Sahoo, Bibhu Datta [2 ,3 ]
Dutta, Ashudeb [1 ]
机构
[1] Indian Inst Technol Hyderabad, Dept Elect Engn, Hyderabad 502205, India
[2] Amrita Univ, Amritapuri 690525, India
[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
关键词
CMOS; LNA; subthreshold; low power; noise-canceling; current reuse; CMOS LNA; RECEIVERS; NETWORK; INPUT;
D O I
10.1109/TCSII.2017.2719678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief presents an energy efficient wideband low noise amplifier (LNA) operating in subthreshold regime. Wideband matching and low noise figure in subthreshold domain is achieved by using a gate inductor-assisted impedance matching and a current reuse feed-forward noise cancelation technique, respectively. Fabricated in UMC 0.18-mu m CMOS technology, the proposed LNA draws 1 mA from 1.8-V supply and achieves a voltage gain of 13 dB (taking into account a 8 dB loss in buffer), minimum noise figure (NFmin) of 6 dB, and 3 dB bandwidth from 2 to 5 GHz.
引用
收藏
页码:834 / 838
页数:5
相关论文
共 13 条
[1]   0.99 mW 3-10 GHz common-gate CMOS UWB LNA using T-match input network and self-body-bias technique [J].
Chang, J. -F. ;
Lin, Y. -S. .
ELECTRONICS LETTERS, 2011, 47 (11) :658-U44
[2]   A 3-5 GHz Current-Reuse gm-Boosted CG LNA for Ultrawideband in 130 nm CMOS [J].
Khurram, Muhammad ;
Hasan, S. M. Rezaul .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2012, 20 (03) :400-409
[3]  
Kumar ARA, 2012, IEEE INT SYMP CIRC S, P1943, DOI 10.1109/ISCAS.2012.6271655
[4]   Analysis and Design of Two Low-Power Ultra-Wideband CMOS Low-Noise Amplifiers With Out-Band Rejection [J].
Liang, Ching-Piao ;
Rao, Pei-Zong ;
Huang, Tian-Jian ;
Chung, Shyh-Jong .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2010, 58 (02) :277-286
[5]   A broadband noise-canceling CMOS LNA for 3.1-10.6-GHz UWB receivers [J].
Liao, Chih-Fan ;
Liu, Shen-Iuan .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (02) :329-339
[6]   A High-Linearity Wideband Common-Gate LNA With a Differential Active Inductor [J].
Ma, Li ;
Wang, Zhi-Gong ;
Xu, Jian ;
Amin, N. M. .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2017, 64 (04) :402-406
[7]   A 3-8 GHz Low-Noise CMOS Amplifier [J].
Meaamar, Ali ;
Boon, Chirn Chye ;
Anh, Do Man ;
Yeo, Kiat Seng .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (04) :245-247
[8]   Short Channel Output Conductance Enhancement Through Forward Body Biasing to Realize a 0.5 V 250 μW 0.6-4.2 GHz Current-Reuse CMOS LNA [J].
Parvizi, Mahdi ;
Allidina, Karim ;
El-Gamal, Mourad N. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (03) :574-586
[9]   A Sub-mW, Ultra-Low-Voltage, Wideband Low-Noise Amplifier Design Technique [J].
Parvizi, Mahdi ;
Allidina, Karim ;
El-Gamal, Mourad N. .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2015, 23 (06) :1111-1122
[10]   Bandwidth extension techniques for CMOS amplifiers [J].
Shekhar, Sudip ;
Walling, Jeffrey S. ;
Allstot, David J. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (11) :2424-2439