Improved electrical properties of Pr-doped SrTiO3 films

被引：18

作者：

Wang, Xiaofei ^{[1
]}

Lu, Xiaomei ^{[1
]}

Weng, Yuyan ^{[1
]}

Cai, Wei ^{[1
]}

Wu, Xiaobo ^{[1
]}

Liu, Yunfei ^{[1
]}

Huang, Fengzhen ^{[1
]}

Zhu, Jinsong ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 5-6期

基金：

美国国家科学基金会;

关键词：

SrTiO3; film; Electric property; Ferroelectricity; STRONTIUM-TITANATE; FERROELECTRICITY; CAPACITORS; TRANSITION;

D O I：

10.1016/j.ssc.2009.11.010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Sr1-xPrxTiO3 films were prepared by metal organic deposition method on (111) Pt/Ti/SiO2/Si substrates. Pr-doping greatly improves the dc leakage behavior of the films. The samples with x = 0.075 show excellent electric field frequency and temperature stability of dielectric properties, while the x = 0.025 samples indicate an obvious dielectric relaxation behavior and better polarization versus applied electric field (P-E) hysteresis loops. These peculiar electrical properties can be explained mainly by the Pr-doping-induced changes in the free charge carriers, the lattice distortion, the charge transfer process and polar nanoregions. In addition, the variable valence of Pr ions may also have significant impacts. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：267 / 270

页数：4

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