Doped Mott insulator as the origin of heavy-fermion behavior in LiV2O4

被引:64
作者
Arita, R. [1 ]
Held, K.
Lukoyanov, A. V.
Anisimov, V. I.
机构
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[3] Ural State Tech Univ, Ekaterinburg 620002, Russia
[4] Russian Acad Sci, Inst Met Phys, Ekaterinburg 620219, Russia
关键词
D O I
10.1103/PhysRevLett.98.166402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the electronic structure of LiV2O4, for which heavy-fermion behavior has been observed in various experiments, by the combination of the local density approximation and dynamical mean field theory. To obtain results at zero temperature, we employ the projective quantum Monte Carlo method as an impurity solver. Our results show that the strongly correlated a(1g) band is a lightly doped Mott insulator which, at low temperatures, shows a sharp (heavy) quasiparticle peak just above the Fermi level, which is consistent with recent photoemission experiments by Shimoyamada et al. [Phys. Rev. Lett. 96, 026403 (2006)].
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页数:4
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