Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

被引：51
作者：
Ishibashi, Shota [1 ]
Seki, Takeshi [1 ]
Nozaki, Takayuki [1 ]
Kubota, Hitoshi [2 ]
Yakata, Satoshi [2 ]
Fukushima, Akio [2 ]
Yuasa, Shinji [2 ]
Maehara, Hiroki [3 ]
Tsunekawa, Koji [3 ]
Djayaprawira, David D. [3 ]
Suzuki, Yoshishige [1 ,2 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
[2] Spintron Res Ctr, Natl Inst Adv Ind Sci & Technol AIST, Tsukuba, Ibaraki 3058568, Japan
[3] Canon ANELVA Corp, Magnet Thin Film Dev Div, Proc Dev Ctr Gen Business Headquarters, Kanagawa 2158550, Japan
来源：
APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 07期
关键词：
SPIN-TRANSFER-TORQUE; MULTILAYER; DRIVEN; EXCITATION; EMISSION; DEVICES;
D O I：
10.1143/APEX.3.073001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on rf current-induced excitation of the ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions under a perpendicular magnetic field. By choosing an appropriate external field and using an Fe-rich CoFeB free layer, the effective precession of the free layer could be excited. In a measurement of homodyne detection, a large dc output voltage of 180 mu V was obtained when an rf signal power of -25 dBm was applied. The sensitivity of this junction, as an rf rectifier, reaches about 170 mV/mW (280 mV/mW after impedance matching correction), which is the same order compared with that of a Schottky diode operated at room temperature.
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页数：3
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