Moire-Based Absolute Interferometry With Large Measurement Range in Wafer-Mask Alignment

被引:7
作者
Di, Chengliang [1 ,2 ]
Yan, Wei [2 ]
Hu, Song [2 ]
Yin, Didi [1 ,3 ]
Ma, Chifei [1 ,2 ]
机构
[1] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[2] Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Microfabricat, Chengdu 610209, Peoples R China
[3] Chinese Acad Sci, Key Lab Beam Control, Chengdu 610209, Peoples R China
基金
中国国家自然科学基金;
关键词
Moire fringes; measurement range; wafer-mask alignment; lithography; LITHOGRAPHY; PROJECTION; GRATINGS; FRINGES;
D O I
10.1109/LPT.2014.2377037
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The moire-based interferometry is demonstrated to significantly improve the measurement range in wafer-mask alignment by adopting two specifically designed four-quadrant grating marks. These relationships between the measurement range, the moire periods and the accuracy of the moire-based detection algorithm are deduced. By demodulating the transverse shifts of the moire fringes with two kinds of periods, the final misalignment can be accurately determined. An experimental setup of the wafer-mask alignment is constructed to explore the feasibility and effectiveness of proposed approach. Results indicate that with the established configurations, the measurement range can be readily extended to 120 mu m, which is dozens of times larger than conventional methods, and meanwhile the detection accuracy retains to be at nanometers level.
引用
收藏
页码:435 / 438
页数:4
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