Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

被引：143

作者：

Vogt, Patrick ^{[1
]}

Bierwagen, Oliver ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 07期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; PULSED-LASER DEPOSITION; ELECTRICAL-PROPERTIES; THIN-FILMS;

D O I：

10.1063/1.4942002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed study of the reaction kinetics of the plasma-assisted molecular beam epitaxy (MBE) growth of the n-type semiconducting oxide Ga2O3 is presented. The growth rate as a function of gallium flux is measured in situ by laser reflectometry at different growth temperatures (TG) and gallium-to-oxygen ratios (rGa). The flux of the suboxide Ga2O desorbed off the growth surface is identified in situ by line-of-sight quadrupole mass spectroscopy. The measurements reveal the influence of TG and rGa on the competing formation of Ga2O3 and desorption of Ga2O resulting in three different growth regimes: (i) Ga transport limited, (ii) Ga2O desorption limited, and (iii) O transport limited. As a result, we present a growth diagram of gallium oxide. This diagram illustrates the regimes of complete, partial, and no Ga incorporation as a function of TG and rGa, and thus provides guidance for the MBE growth of Ga2O3. (C) 2016 AIP Publishing LLC.

引用

页数：4

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