Thermally induced transitions of CrN thin films

被引：71

作者：

Mayrhofer, Paul H. ^{[1
]}

Rovere, Florian

Moser, Martin

Strondl, Christian

Tietema, Roel

机构：

[1] Univ Leoben, Dept Phys Met & Mat, A-8700 Leoben, Austria

[2] Hauzer Techno Coating BV, NL-5928LL Venlo, Netherlands

来源：

SCRIPTA MATERIALIA | 2007年 / 57卷 / 03期

关键词：

physical vapor deposition; DSC; decomposition; dissociation; recrystallization;

D O I：

10.1016/j.scriptamat.2007.03.058

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Annealing of CrN thin films in an inert atmosphere causes dissociation into Cr2N with N-2 release with an activation energy, E., of similar to 4.39 eV atom(-1) in the temperature range 1000-1250 degrees C. At higher temperatures the Cr2N dissociates into Cr and N-2 with E-a approximate to 3.15 eV atom(-1). These processes occur after recovery and recrystallization during which the lattice parameter decreases (from 4.162 to 4.142 angstrom) and the mean crystallite feature size increases (from 21 to 104 nm) compared to the as-deposited values. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：249 / 252

页数：4

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