Recent Progress on Semiconductor-Interface Facing Clinical Biosensing

被引:10
作者
Zhang, Mingrui [1 ]
Adkins, Mitchell [2 ]
Wang, Zhe [2 ]
机构
[1] Univ Manchester, Sch Engn, Manchester M13 9PL, Lancs, England
[2] Oakland Univ, Chem Dept, Rochester, MI 48309 USA
基金
美国国家科学基金会;
关键词
biosensor; semiconductor; interface; nanomaterial; field-effect transistor; SURFACE-PLASMON RESONANCE; NANOSCALE OPTICAL BIOSENSOR; HIGHLY SENSITIVE DETECTION; RANGE DISTANCE DEPENDENCE; FIELD-EFFECT TRANSISTOR; METAL-OXIDE; MICRO/NANOSTRUCTURED ARRAYS; SENSOR; MOS2; MONOLAYER;
D O I
10.3390/s21103467
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Semiconductor (SC)-based field-effect transistors (FETs) have been demonstrated as amazing enhancer gadgets due to their delicate interface towards surface adsorption. This leads to their application as sensors and biosensors. Additionally, the semiconductor material has enormous recognizable fixation extends, high affectability, high consistency for solid detecting, and the ability to coordinate with other microfluidic gatherings. This review focused on current progress on the semiconductor-interfaced FET biosensor through the fundamental interface structure of sensor design, including inorganic semiconductor/aqueous interface, photoelectrochemical interface, nano-optical interface, and metal-assisted interface. The works that also point to a further advancement for the trademark properties mentioned have been reviewed here. The emergence of research on the organic semiconductor interface, integrated biosensors with Complementary metal-oxide-semiconductor (CMOS)-compatible, metal-organic frameworks, has accelerated the practical application of biosensors. Through a solid request for research along with sensor application, it will have the option to move forward the innovative sensor with the extraordinary semiconductor interface structure.
引用
收藏
页数:25
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