Quantum Hall effect in bilayer system with array of antidots

被引：0

作者：

Pagnossin, I. R. ^{[1
]}

Gusev, G. M. ^{[1
]}

Sotomayor, N. M. ^{[1
]}

Seabra, A. C. ^{[1
]}

Quivy, A. A. ^{[1
]}

Lamas, T. E. ^{[1
]}

Portal, J. C. ^{[1
]}

机构：

[1] Univ Fed Sao Paulo, Inst Fis, CP 66318, BR-05315970 Sao Paulo, SP, Brazil

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

基金：

巴西圣保罗研究基金会;

关键词：

quantum hall effect; antidot lattice; double quantum well;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the Quantum Hall effect in a bilayer system modulated by gate-controlled antidot lattice potential. The Hall resistance shows plateaus which are quantized to anomalous multiplies of h/e(2). We suggest that this complex behavior is due to the nature of the edge-states in double quantum well (DQW) structures coupled to an array of antidots: these plateaus may be originated from the coexistence of normal and counter- rotating edge-states in different layers.

引用

页码：677 / +

页数：2

共 7 条

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