Heterogeneous modulation of exciton emission in triangular WS2 monolayers by chemical treatment

被引:34
作者
Dhakal, Krishna P. [1 ,2 ]
Roy, Shrawan [1 ,2 ]
Yun, Seok Joon [1 ,2 ]
Ghimire, Ganesh [1 ,2 ]
Seo, Changwon [1 ,2 ]
Kim, Jeongyong [1 ,2 ]
机构
[1] Inst Basic Sci, IBS Ctr Integrated Nanostruct Phys, Suwon 16419, South Korea
[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea
关键词
GRAIN-BOUNDARIES; LIGHT-EMISSION; MOS2; PHOTOLUMINESCENCE; HETEROSTRUCTURES; IDENTIFICATION; RECOMBINATION; EFFICIENCY; DISULFIDE; TRIONS;
D O I
10.1039/c7tc01833a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemical treatments were recently shown to be very effective in enhancing the exciton emission of monolayer transition metal dichalcogenides (1L-TMDs) by suppressing the exciton quenching caused by structural defects. However, the effects of these chemical treatments varied greatly depending on the synthesis method and the type of 1L-TMD; therefore, the exact origin of the emission enhancement is still elusive. Here we report the spatially heterogeneous effects of bis(trifluoromethane) sulfonimide (TFSI) and benzyl viologen (BV) treatment on the optical properties of triangular 1L-WS2 grown by chemical vapor deposition (CVD). Nanoscale photoluminescence (PL) and Raman spectral maps showed that TFSI had a minimal effect on the inner region of the triangular WS2 grain, whereas the PL of the edge region was enhanced up to 25 times; further, BV reduced the PL, also more strikingly in the edge region. Systematic variation of the spectral weights among neutral excitons, trions, and bi-excitons indicated that p-doping and n-doping with TFSI and BV, respectively, occurred in both the inner and edge regions; however, the PL enhancement was attributed mainly to the reduction of structural defects caused by TFSI treatment. Our observation of the spatially heterogeneous effects of chemical treatment suggests that the inner and edge regions of CVD-grown 1L-WS2 are populated with different types of structural defects and helps in clarifying the mechanism by which chemical treatment enhances the optical properties of 1L-TMDs.
引用
收藏
页码:6820 / 6827
页数:8
相关论文
共 38 条
  • [1] Material and device properties of superacid-treated monolayer molybdenum disulfide
    Alharbi, Abdullah
    Zahl, Percy
    Shahrjerdi, Davood
    [J]. APPLIED PHYSICS LETTERS, 2017, 110 (03)
  • [2] Amani M, 2016, ACS NANO, V10, P6535, DOI [10.1021/acsnano.6b03443, 10.1021/acsnano.6603443]
  • [3] Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides
    Amani, Matin
    Taheri, Peyman
    Addou, Rafik
    Ahn, Geun Ho
    Kiriya, Daisuke
    Lien, Der-Hsien
    Ager, Joel W., III
    Wallace, Robert M.
    Jayey, Ali
    [J]. NANO LETTERS, 2016, 16 (04) : 2786 - 2791
  • [4] Near-unity photoluminescence quantum yield in MoS2
    Amani, Matin
    Lien, Der-Hsien
    Kiriya, Daisuke
    Xiao, Jun
    Azcatl, Angelica
    Noh, Jiyoung
    Madhvapathy, Surabhi R.
    Addou, Rafik
    Santosh, K. C.
    Dubey, Madan
    Cho, Kyeongjae
    Wallace, Robert M.
    Lee, Si-Chen
    He, Jr-Hau
    Ager, Joel W., III
    Zhang, Xiang
    Yablonovitch, Eli
    Javey, Ali
    [J]. SCIENCE, 2015, 350 (6264) : 1065 - 1068
  • [5] Identification of individual and few layers of WS2 using Raman Spectroscopy
    Berkdemir, Ayse
    Gutierrez, Humberto R.
    Botello-Mendez, Andres R.
    Perea-Lopez, Nestor
    Elias, Ana Laura
    Chia, Chen-Ing
    Wang, Bei
    Crespi, Vincent H.
    Lopez-Urias, Florentino
    Charlier, Jean-Christophe
    Terrones, Humberto
    Terrones, Mauricio
    [J]. SCIENTIFIC REPORTS, 2013, 3
  • [6] Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
    Chakraborty, Biswanath
    Bera, Achintya
    Muthu, D. V. S.
    Bhowmick, Somnath
    Waghmare, U. V.
    Sood, A. K.
    [J]. PHYSICAL REVIEW B, 2012, 85 (16)
  • [7] Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
    Chamlagain, Bhim
    Li, Qing
    Ghimire, Nirmal Jeevi
    Chuang, Hsun-Jen
    Perera, Meeghage Madusanka
    Tu, Honggen
    Xu, Yong
    Pan, Minghu
    Xaio, Di
    Yan, Jiaqiang
    Mandrus, David
    Zhou, Zhixian
    [J]. ACS NANO, 2014, 8 (05) : 5079 - 5088
  • [8] Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2
    Cheiwchanchamnangij, Tawinan
    Lambrecht, Walter R. L.
    [J]. PHYSICAL REVIEW B, 2012, 85 (20)
  • [9] Optical control of charged exciton states in tungsten disulfide
    Currie, M.
    Hanbicki, A. T.
    Kioseoglou, G.
    Jonker, B. T.
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (20)
  • [10] Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2
    Dhakal, Krishna P.
    Dinh Loc Duong
    Lee, Jubok
    Nam, Honggi
    Kim, Minsu
    Kan, Min
    Lee, Young Hee
    Kim, Jeongyong
    [J]. NANOSCALE, 2014, 6 (21) : 13028 - 13035