Low loss Ge-on-Si waveguides operating in the 8-14 um atmospheric transmission window

被引:58
作者
Gallacher, K. [1 ]
Millar, R. W. [1 ]
Griskeviciute, U. [1 ]
Baldassarre, L. [2 ]
Sorel, M. [1 ]
Ortolani, M. [2 ]
Paul, D. J. [1 ]
机构
[1] Univ Glasgow, Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland
[2] Univ Roma La Sapienza, Dipartimento Fis, Piazzale Aldo Moro 5, I-00185 Rome, Italy
基金
英国工程与自然科学研究理事会;
关键词
8.5; MU-M; SILICON; GERMANIUM; WAVELENGTH;
D O I
10.1364/OE.26.025667
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Germanium-on-silicon waveguides were modeled, fabricated and characterized at wavelengths ranging from 7.5 to 11 mu m. Measured waveguide losses are below 5 dB/cm for both TE and TM polarization and reach values of similar to 1 dB/cm for >= 10 mu m wavelengths for the TE polarization. This work demonstrates experimentally for the first time that Ge-on-Si is a viable waveguide platform for sensing in the molecular fingerprint spectral region. Detailed modeling and analysis is presented to identify the various loss contributions, showing that with practical techniques losses below 1 dB/cm could be achieved across the full measurement range. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.
引用
收藏
页码:25667 / 25675
页数:9
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