Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography

被引：12
作者：
Blavette, D. [1 ]
Duguay, S. [1 ]
机构：
[1] Normandie Univ, Grp Phys Mat, UMR CNRS 6634, BP 12, F-76801 St Etienne Du Rouvray, France
来源：
JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 18期
关键词：
ION-IMPLANTED SILICON; DEVICES;
D O I：
10.1063/1.4948238
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The role of atom probe tomography in the investigation of clustering and segregation of dopants to lattice defects in semiconductors is highlighted on the basis of some selected salient illustrations obtained at the Groupe de Physique des Materiaux of Rouen (France). The instrument is shown to be able to map out the 3D distribution of chemical species in the three dimensions of space at the ultimate scale. Results related to clustering, segregation of dopants (As, B, and P) to grain boundaries, dislocation loops, and extended defects in silicon are discussed. Published by AIP Publishing.
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页数：5
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