Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

被引：1

作者：

Hajek, F. ^{[1
,2
]}

Hospodkova, A. ^{[1
]}

Hubacek, T. ^{[1
]}

Oswald, J. ^{[1
]}

Pangrac, J. ^{[1
]}

Dominec, F. ^{[1
]}

Horesovsky, R. ^{[1
,2
]}

Kuldova, K. ^{[1
]}

机构：

[1] CAS, Inst Phys, Vvi, Cukrovarnicka 10, CZ-16200 Prague 6, Czech Republic

[2] Czech Tech Univ, Fac Fac Nucl Sci & Phys Engn, Brehova 7, CZ-11519 Prague 1, Czech Republic

来源：

JOURNAL OF LUMINESCENCE | 2021年 / 236卷

关键词：

Nitrides; Impurity; SIMS; InGaN; GaN; GAN; NUMBER;

D O I：

10.1016/j.jlumin.2021.118127

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Zn contamination of InGaN/GaN multiple quantum well (MQW) structure from unknown source is found. A model describing concentration profile of Zn acceptor impurity in InGaN/GaN MQW structure is introduced and compared to measured values. The model is based on difference among the formation energies of acceptors in the InGaN quantum wells. A nice correlation of the model and experimental data helps to reveal origin of Zn impurity in InGaN quantum wells. Proposed methodology can be applied to different acceptor-like defects and shine light the upon enigma of high defect concentration in the bottom quantum wells grown atop the n-type buffer layer.

引用

页数：5

共 16 条

[1] Generated Carrier Dynamics in V-Pit-Enhanced InGaN/GaN Light-Emitting Diode [J].

Ajia, Idris A. ;

Edwards, Paul R. ;

Pak, Yusin ;

Belekov, Ermek ;

Roldan, Manuel A. ;

Wei, Nini ;

Liu, Zhiqiang ;

Martin, Robert W. ;

Roqan, Iman S. .

ACS PHOTONICS, 2018, 5 (03) :820-826

[2] nextnano: General purpose 3-D simulations [J].

Birner, Stefan ;

Zibold, Tobias ;

Andlauer, Till ;

Kubis, Tillmann ;

Sabathil, Matthias ;

Trellakis, Alex ;

Vogl, Peter .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) :2137-2142

[3] RECOMBINATION MECHANISMS IN GAN-ZN [J].

BOULOU, M ;

FURTADO, M ;

JACOB, G ;

BOIS, D .

JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) :767-770

[4] Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells [J].

Christian, George M. ;

Hammersley, Simon ;

Davies, Matthew J. ;

Dawson, Philip ;

Kappers, Menno J. ;

Massabuau, Fabien C. -P. ;

Oliver, Rachel A. ;

Humphreys, Colin J. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6, 2016, 13 (5-6) :248-251

[5] Blue luminescence and Zn acceptor in GaN [J].

Demchenko, D. O. ;

Reshchikov, M. A. .

PHYSICAL REVIEW B, 2013, 88 (11)

[6] GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells [J].

Haller, C. ;

Carlin, J. -F. ;

Jacopin, G. ;

Liu, W. ;

Martin, D. ;

Butte, R. ;

Grandjean, N. .

APPLIED PHYSICS LETTERS, 2018, 113 (11)

[7] Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency [J].

Haller, C. ;

Carlin, J. -F. ;

Jacopin, G. ;

Martin, D. ;

Butte, R. ;

Grandjean, N. .

APPLIED PHYSICS LETTERS, 2017, 111 (26)

[8] Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures [J].

Hubacek, T. ;

Hospodkova, A. ;

Oswald, J. ;

Kuldova, K. ;

Pangrac, J. .

JOURNAL OF CRYSTAL GROWTH, 2017, 464 :221-225

[9] Advancement toward ultra- thick and bright InGaN/ GaN structures with a high number of QWs [J].

Hubacek, Tomas ;

Hospodkova, Alice ;

Kuldova, Karla ;

Oswald, Jiri ;

Pangrac, Jiri ;

Jary, Vitezslav ;

Dominec, Filip ;

Zikova, Marketa Slavicka ;

Hajek, Frantisek ;

Hulicius, Eduard ;

Vetushka, Alexej ;

Ledoux, Gilles ;

Dujardin, Christophe ;

Nikl, Martin .

CRYSTENGCOMM, 2019, 21 (02) :356-362

[10] A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies [J].

Matsubara, Masahiko ;

Bellotti, Enrico .

JOURNAL OF APPLIED PHYSICS, 2017, 121 (19)

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