Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

被引：41

作者：

Zheng, HQ ^{[1
]}

Radhakrishnan, K ^{[1
]}

Wang, H ^{[1
]}

Yuan, KH ^{[1
]}

Yoon, SF ^{[1
]}

Ng, GI ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.1306657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InP/InGaAs double-heterojunction bipolar transistor (HBT) structures were grown metamorphically on GaAs substrates by solid-source molecular-beam epitaxy. A linearly graded InxGa1-xP (x varying from 0.48 to 1) buffer layer was used to accommodate the strain relaxation. The crystallinity of the buffer layer and the HBT structure was examined by x-ray diffractometry. Devices with 5 x 5 mu m(2) emitter area showed a typical peak current gain of 40, a common-emitter breakdown voltage (BVCEO) higher than 9 V, a current gain cut-off frequency (f(T)) of 46 GHz, and a maximum oscillation frequency (f(max)) of 40 GHz. (C) 2000 American Institute of Physics. [S0003-6951(00)02432-3].

引用

页码：869 / 871

页数：3

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