GaN Pushing the Limits of High-Speed Switching

被引：0

作者：

Heinrich, Wolfgang ^{[1
]}

Wolff, Nikolai ^{[1
]}

Bengtsson, Olof ^{[1
]}

Hoffmann, Thomas ^{[1
]}

Huhn, Florian ^{[1
]}

Liero, Armin ^{[1
]}

Wentzel, Andreas ^{[1
]}

机构：

[1] Ferdinand Braun Inst FBH, Leibniz Inst Fuer Hoechstfrequenztech, Berlin, Germany

来源：

2018 22ND INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2018) | 2018年

关键词：

GaN HEMT; PA; Envelope Tracking; class-G; digital PA; class-S; laser driver; AMPLIFIER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN HEMTs offer an unprecedented combination in terms of power handling and speed, which makes them the ideal candidate for microwave and mm-wave high-power amplifiers as well as fast switches in power electronics. This paper presents three examples going beyond these two classical fields of application, which demonstrate the high-speed switching capabilities of GaN HEMTs: A discrete broad-band envelope tracking modulator, a microwave digital power amplifier, and a fast high-current laser driver.

引用

页码：73 / 76

页数：4

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