A low phase noise W-band MMIC GaN HEMT oscillator

被引：7

作者：

Do, Thanh Ngoc Thi ^{[1
]}

Yan, Yu ^{[1
]}

Kuylenstierna, Dan ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Gothenburg, Sweden

来源：

2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2020年

基金：

欧盟地平线“2020”;

关键词：

oscillator; gallium nitride (GaN); HEMT; millimeter-wave; monolithic microwave integrated circuit (MMIC); phase noise; W-band (75-110 GHz);

D O I：

10.1109/APMC47863.2020.9331430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a fundamental mode W-band MMIC balanced Colpitts oscillator implemented in an advanced 60 nm gallium nitride (GaN) high electron mobility transistor (HEMT) process from OMMIC foundry. The oscillator operates around 85 GHz with measured peak output power of nearly 0 dBm and phase noise at 10 MHz offset of -120 dBc/Hz. To the best authors' knowledge, the phase noise is state-of-the-art value for W-band monolithic microwave integrated circuit (MMIC) GaN HEMT oscillators.

引用

页码：113 / 115

页数：3

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