Nanometric structures of highly oriented zinc blende ZnO thin films

被引：8

作者：

Martinez-Perez, L. ^{[1
]}

Munoz-Aguirre, N. ^{[2
]}

Munoz-Aguirre, S. ^{[3
]}

Zelaya-Angel, O. ^{[4
]}

机构：

[1] Inst Politecn Nacl, Unidad Profes Interdisciplinaria Ingn & Tecnol Av, Mexico City 07340, DF, Mexico

[2] Inst Politecn Nacl, Secc Estudios Posgrad & Invest, Escuela Super Ingn Mecan & Elect, Unidad Azcapotzalco, Mexico City 02250, DF, Mexico

[3] Benemerita Univ Autonoma Puebla, Fac Ciencias Fis Matemat, Puebla 72570, Mexico

[4] IPN, Dept Fis, Ctr Invest & Estudios Avanzados, Mexico City 07351, DF, Mexico

来源：

MATERIALS LETTERS | 2015年 / 139卷

关键词：

Thin films; Deposition; Phase transformation; Cristal structure; Microstructure; Atomic Force Microscopy; ZINCBLENDE; GROWTH;

D O I：

10.1016/j.matlet.2014.10.054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide thin films in cubic zinc blende (ZB) crystalline phase on glass substrates by means of the spray pyrolysis technique were deposited. X-ray diffraction spectra revealed that the ZB-ZnO films grow highly oriented along the (004) crystalline direction with no epitaxial influence. Optical absorbance measurements indicated that the forbidden energy band gap is 3.18 +/- 0.02 eV in accordance with reports on the experimental value of the band gap of ZB-ZnO structures. Atomic Force Microscopy images exhibit nanometric structures of the surface with the approximated aspect of circular nanodiscs. The thickness of the thin films is 350 +/- 20 nm, which suggests a good stability of the films. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：63 / 65

页数：3

共 17 条

[1]

[Anonymous], 2004, ADV TEXTS PHYS

[2]

[Anonymous], MICR CLEAN SOL

[3] ESTIMATION OF HGCDTE BAND-GAP VARIATIONS BY DIFFERENTIATION OF THE ABSORPTION-COEFFICIENT [J].

ARIEL, V ;

GARBER, V ;

ROSENFELD, D ;

BAHIR, G .

APPLIED PHYSICS LETTERS, 1995, 66 (16) :2101-2103

[4] Review of zincblende ZnO: Stability of metastable ZnO phases [J].

Ashrafi, A. ;

Jagadish, C. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)

[5] Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers [J].

Ashrafi, ABMA ;

Ueta, A ;

Avramescu, A ;

Kumano, H ;

Suemune, I ;

Ok, YW ;

Seong, TY .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :550-552

[6] New phase boundary and high-pressure thermoelasticity of ZnO [J].

Decremps, F ;

Zhang, J ;

Liebermann, RC .

EUROPHYSICS LETTERS, 2000, 51 (03) :268-274

[7]

Gauthier S., 1991, SCANNING PROBE MICRO

[8] Zinc Oxide-From Synthesis to Application: A Review [J].

Kolodziejczak-Radzimska, Agnieszka ;

Jesionowski, Teofil .

MATERIALS, 2014, 7 (04) :2833-2881

[9] Difference in optical bandgap between zinc-blende and wurtzite ZnO structure formed on sapphire (0001) substrate [J].

Lee, GH ;

Kawazoe, T ;

Ohtsu, M .

SOLID STATE COMMUNICATIONS, 2002, 124 (5-6) :163-165

[10]

Martinez-Perez L, 2006, PHYS STATUS SOLIDI A, V203, P2411

← 1 2 →