Identification of a donor-related recombination channel in ZnO thin films

被引：14

作者：

Brandt, Matthias ^{[1
]}

von Wenckstern, Holger ^{[1
]}

Benndorf, Gabriele ^{[1
]}

Lange, Martin ^{[1
]}

Dietrich, Christof P. ^{[1
]}

Kranert, Christian ^{[1
]}

Sturm, Chris ^{[1
]}

Schmidt-Grund, Ruediger ^{[1
]}

Hochmuth, Holger ^{[1
]}

Lorenz, Michael ^{[1
]}

Grundmann, Marius ^{[1
]}

Wagner, Markus R. ^{[2
]}

Alic, Miran ^{[2
]}

Nenstiel, Christian ^{[2
]}

Hoffmann, Axel ^{[2
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 07期

关键词：

EXCITON;

D O I：

10.1103/PhysRevB.81.073306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An excitonic recombination line is observed in photoluminescence spectra of ZnO thin films at 3.3465 eV. The line is labeled I-12. Its appearance was only observed in samples grown on a MgO or heavily aluminum-doped ZnO buffer layer. The properties of the recombination mechanism were probed by photoluminescence and photoluminescence-excitation spectroscopy. The recombination was classified to be an exciton bound to a neutral donor. Both an ionized state and a two-electron satellite transition were observed and could be correlated with the central transition. The excitation channels are similar to those of the well-known I-6 transition related to Al-Zn. The localization energy was calculated to be 29.4 meV. A donor activation energy of 90.8 meV was extrapolated using the Haynes rule for ZnO.

引用

页数：4

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