Effects of O2 fraction on the properties of Al-doped ZnO thin films treated by high-energy electron beam irradiation

被引：14
作者：
Yun, Eui-Jung [1 ,2 ]
Jung, Jin Woo [1 ]
Lee, Byung Cheol [3 ]
机构：
[1] Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, Chungnam, South Korea
[2] Hoseo Univ, Dept Syst Control Engn, Asan 336795, Chungnam, South Korea
[3] Korea Atom Energy Res Inst, Lab Quantum Opt, Taejon 305353, South Korea
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 496卷 / 1-2期
关键词：
AZO thin films; O-2; fraction; Electron beam irradiation effects; Luminescence; Photoelectron spectroscopies; OPTICAL-PROPERTIES; CONDUCTIVITY; LUMINESCENCE; TRANSISTORS; DEPOSITION; STABILITY; DEFECTS;
D O I：
10.1016/j.jallcom.2010.02.097
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrated the effects of O-2 fraction on the properties of high-energy electron beam irradiation (HEEBI) treated Al-doped ZnO (AZO) films prepared by radio frequency magnetron sputtering using various O-2 fraction conditions. Hall and photoluminescence (PL) measurements revealed that for HEEBI-treated AZO films with a dose of 10(16) electrons/cm(2), the p-type conductivity was exhibited for films with O-2 fractions in range of 0.3-0.9 while the n-type conductivity was observed for films with an O-2 fraction of 0. Hall results also indicated that HEEBI-treated AZO films prepared by O-2 fractions of 0.3 and 0.9 can be used for p-channel layers in the applications of transparent thin film transistor. PL and X-ray photoelectron spectroscopy showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in the HEEBI-treated films prepared by O-2 fractions in range of 0.3-0.9, resulting in the p-type conductivity in the films. We conclude from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher compressive stress was observed in the films prepared by a higher O-2 fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the roughest surface morphology was observed in HEEBI-treated films prepared by an O-2 fraction of 0.3, which causes the highest resistivity in those films, as evident by Hall study. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：543 / 547
页数：5
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