Thin film compressive stresses due to adatom insertion into grain boundaries

被引：82

作者：

Pao, Chun-Wei ^{[1
]}

Foiles, Stephen M.

Webb, Edmund B., III

Srolovitz, David J.

Floro, Jerrold A.

机构：

[1] Princeton Univ, Dept Mech & Aerosp Engn, Princeton, NJ 08544 USA

[2] Sandia Natl Labs, Albuquerque, NM 87159 USA

[3] Yeshiva Univ, Dept Phys, New York, NY 10033 USA

[4] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.99.036102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Atomic simulations of the growth of polycrystalline Ni demonstrate that deposited atoms incorporate into the film at boundaries, resulting in compressive stress generation. Incorporated atoms can also leave the boundaries and thus relieve compressive stress. This leads to a complex interplay between growth stress, adatom incorporation, and surface structure. A simple, theoretical model that accounts for grain size effects is proposed and is in good agreement with simulation results.

引用

页数：4

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