Structure and luminescence properties of Bi3+-doped ZrSiO4 phosphors for near-UV excited white LEDs
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作者:
Wang, Ming
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Guilin Univ Technol, Coll Mat Sci & Engn, Key Lab Nonferrous Mat & New Proc Technol, Guangxi Key Lab Opt & Elect Mat & Devices,Minist E, Guilin 541004, Peoples R ChinaGuilin Univ Technol, Coll Mat Sci & Engn, Key Lab Nonferrous Mat & New Proc Technol, Guangxi Key Lab Opt & Elect Mat & Devices,Minist E, Guilin 541004, Peoples R China
Wang, Ming
[1
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Zhong, Zhiqiang
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Guilin Univ Technol, Coll Mat Sci & Engn, Key Lab Nonferrous Mat & New Proc Technol, Guangxi Key Lab Opt & Elect Mat & Devices,Minist E, Guilin 541004, Peoples R ChinaGuilin Univ Technol, Coll Mat Sci & Engn, Key Lab Nonferrous Mat & New Proc Technol, Guangxi Key Lab Opt & Elect Mat & Devices,Minist E, Guilin 541004, Peoples R China
Zhong, Zhiqiang
[1
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Lin, Junhan
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Guilin Univ Technol, Coll Mat Sci & Engn, Key Lab Nonferrous Mat & New Proc Technol, Guangxi Key Lab Opt & Elect Mat & Devices,Minist E, Guilin 541004, Peoples R ChinaGuilin Univ Technol, Coll Mat Sci & Engn, Key Lab Nonferrous Mat & New Proc Technol, Guangxi Key Lab Opt & Elect Mat & Devices,Minist E, Guilin 541004, Peoples R China
Lin, Junhan
[1
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Zhang, Rui
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Guilin Univ Technol, Coll Mat Sci & Engn, Key Lab Nonferrous Mat & New Proc Technol, Guangxi Key Lab Opt & Elect Mat & Devices,Minist E, Guilin 541004, Peoples R ChinaGuilin Univ Technol, Coll Mat Sci & Engn, Key Lab Nonferrous Mat & New Proc Technol, Guangxi Key Lab Opt & Elect Mat & Devices,Minist E, Guilin 541004, Peoples R China
Zhang, Rui
[1
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机构:
[1] Guilin Univ Technol, Coll Mat Sci & Engn, Key Lab Nonferrous Mat & New Proc Technol, Guangxi Key Lab Opt & Elect Mat & Devices,Minist E, Guilin 541004, Peoples R China
ZrSiO4:Bi3+ phosphors were synthesized by conventional high-temperature solid-phase method. The structural and optical behaviors were investigated by X-ray diffraction, scanning electron microscope, X-ray photoelectron spectroscopy and photoluminescence spectra. Bi2O3 contributes to the ZrSiO4 phase generation from liquid phase sintering. The ZrSiO4:Bi3+ shows a broad emission band centered at 548 nm when excited at 361 nm. The Bi3+ doping concentration is optimized to be 4 mol%, and the luminescence intensity of ZrSiO4:0.04Bi3+ at 150 degrees C keeps 84% of that at room temperature. The results indicate that the ZrSiO4:Bi3+ phosphors offer more possibilities in the near-UV excited white LED applications.
机构:
Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, IndiaIndian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India