Effect of boron addition on disorder-order transformation of FePt thin films

被引:11
作者
Lee, Y. M.
Lee, B. S.
Lee, C. G. [1 ]
Koo, B. H.
Shimada, Y.
机构
[1] Changwon Natl Univ, Sch Nano Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
关键词
FePt; ordering; perpendicular media; boron; L1(0) phase;
D O I
10.1016/j.jmmm.2006.10.1136
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The MgO20nm/(FePt0.85B0.15)(x nm)/MgO20 (nm) (x = 10 and 50) films were prepared on Si (1 0 0) substrates by RF magnetron sputtering. The boron content in thin. lms was found to be about 15 at% by wavelength dispersive spectroscopy. At 50 nm of film thickness, the coercivity of Fe0.5Pt0.5 and (FePt)(0.85)B-0.15 films increased drastically above 400 degrees C. Measured lattice constants and coercivity indicated that addition of boron to the FePt. lm at 50 nm thickness is not effective in reducing the ordering temperature. However, in case of 10-nm-thick films, addition of boron decreased the ordering temperature to 400 degrees C, which is 200 degrees C lower than that of the film without boron. Decrease of the ordering temperature is attributed (closely related) to the high diffusivities of Fe and Pt associated with the defects by movement of the boron atoms to interstitial or substitutional lattice site. (C) 2006 Elsevier B. V. All rights reserved.
引用
收藏
页码:E918 / E920
页数:3
相关论文
共 5 条
[1]   Microstructure and magnetic properties of Fe100-xPtx alloy films [J].
Kuo, CM ;
Kuo, PC ;
Wu, HC .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) :2264-2269
[2]  
LUO CP, 1995, IEEE T MAGN, V31, P2765
[3]   Effects of third elements (Ag, B, Cu, Ir) addition and high Ar gas pressure on L10 FePt films [J].
Nishimura, K ;
Takahashi, K ;
Uchida, H ;
Inoue, M .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 :2189-2190
[4]   Effect of Cu on the structure and magnetic properties of FePt sputtered film [J].
Takahashi, YK ;
Ohnuma, M ;
Hono, K .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 246 (1-2) :259-265
[5]   High Ku materials approach to 100 Gbits/in2 [J].
Weller, D ;
Moser, A ;
Folks, L ;
Best, ME ;
Lee, W ;
Toney, MF ;
Schwickert, M ;
Thiele, JU ;
Doerner, MF .
IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (01) :10-15