Microstructural and electrical properties of nanocomposite PZT/Pt thin films made by pulsed laser deposition

被引:15
作者
Pham, MTN [1 ]
Boukamp, BA [1 ]
Bouwmeester, HJM [1 ]
Blank, DHA [1 ]
机构
[1] Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
关键词
nanocomposites; dielectric properties; electrical properties; perovskites; PZT; thin films;
D O I
10.1016/j.ceramint.2003.12.131
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Dual phase composites made by dispersing a metallic phase into a ferroelectric matrix are of great interest due to significant enhancement in the dielectric constant (E). In this study thin films of nano sized platinum (Pt) particles were embedded in a crystalline lead-zirconate-titantate (PZT) matrix, using pulsed laser deposition. The microstructure of these films was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). The electrical proper-ties were investigated by capacitance versus voltage (C-V) and leakage current versus voltage (I-V measurements. The influence of the Pt dispersoids on the crystallinity of the PZT matrix and the dielectric properties of the composites are discussed. Pt addition caused significant changes in the electrical properties, which showed the difference from what is observed for bulk PZT/Pt composites. (C) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:1499 / 1503
页数:5
相关论文
共 15 条
[1]   Effect of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol-gel process [J].
Cho, SM ;
Jeon, DY .
THIN SOLID FILMS, 1999, 338 (1-2) :149-154
[2]   Enhancement of dielectric and ferroelectric properties by addition of Pt particles to a lead zirconate titanate matrix [J].
Duan, N ;
ten Elshof, JE ;
Verweij, H ;
Greuel, G ;
Dannapple, O .
APPLIED PHYSICS LETTERS, 2000, 77 (20) :3263-3265
[3]  
Kingery W. D., 1976, INTRO CERAMICS, P953
[4]   Imposed layer-by-layer growth by pulsed laser interval deposition [J].
Koster, G ;
Rijnders, GJHM ;
Blank, DHA ;
Rogalla, H .
APPLIED PHYSICS LETTERS, 1999, 74 (24) :3729-3731
[5]  
Lamb DR., 1967, Electrical conduction mechanisms in thin insulating films
[6]  
MAI TN, IN PRESS APPL PHYS A
[7]  
MALIARIS A, 1971, J APPL PHYS, V42, P614
[8]  
Pham MTN, 2003, MATER RES SOC SYMP P, V755, P109
[9]  
Ramesh R., 1997, THIN FILM FERROELECT
[10]  
SAHIMI M, 1994, APPL PERCOLATION THE