A 29dBm linear power amplifier module for IEEE 802.16e (Wimax) and LTE applications using E-mode pHEMT technology

被引：2
作者：
Chow, Y. H. [1 ]
Tee, K. G. [1 ]
Rajendran, J. [1 ]
Ho, S. Y. [1 ]
Lee, M. H. [1 ]
Chan, C. F. [1 ]
Liew, Y. Y. [1 ]
机构：
[1] Avago Technol Malaysia, WSR R&D, Bayan Lepas Fiz 11900, Penang, Malaysia
来源：
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS | 2009年
关键词：
OFDMA; 802.16e; LTE; Amplifier; Linearity; pHEMT; MMIC; EVM;
D O I：
10.1109/RFIT.2009.5383731
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes, for the first time, the design and realization of a 5V supply 29dBm linear power amplifier for the IEEE 802.16e (WiMax) and LTE applications in the (2.5-2.7)GHz band. When tested using a 10MHz bandwidth OFDMA signal with 64-QAM modulation, the amplifier consumes 950mA of total current. Nominal gain is 35dB, and 20dB gain attenuator that is activated by a CMOS-compatible voltage pin is included on-chip. Output power detection is achieved by the use of an on-chip power detector and a bias shutdown voltage shuts down the complete amplifier. Low power operation is also possible with 26dBm of linear output power at less than 2.5% EVM. The amplifier is fabricated using a proprietary 0.25um enhancement-mode pHEMT (EpHEMT) technology The complete module is packaged in a multilayer chip-on-board (MCOB) 5mm x 5mm module.
引用
收藏
页码：92 / 95
页数：4
相关论文
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Chow, Y. H. ;
Tee, K. G. ;
Rajendran, J. ;
Ho, S. Y. ;
Lee, M. H. ;
Chan, C. F. ;
Liew, Y. Y. .
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT 2009), 2009, :63-66
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