A 29dBm linear power amplifier module for IEEE 802.16e (Wimax) and LTE applications using E-mode pHEMT technology

被引：2

作者：

Chow, Y. H. ^{[1
]}

Tee, K. G. ^{[1
]}

Rajendran, J. ^{[1
]}

Ho, S. Y. ^{[1
]}

Lee, M. H. ^{[1
]}

Chan, C. F. ^{[1
]}

Liew, Y. Y. ^{[1
]}

机构：

[1] Avago Technol Malaysia, WSR R&D, Bayan Lepas Fiz 11900, Penang, Malaysia

来源：

2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS | 2009年

关键词：

OFDMA; 802.16e; LTE; Amplifier; Linearity; pHEMT; MMIC; EVM;

D O I：

10.1109/RFIT.2009.5383731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes, for the first time, the design and realization of a 5V supply 29dBm linear power amplifier for the IEEE 802.16e (WiMax) and LTE applications in the (2.5-2.7)GHz band. When tested using a 10MHz bandwidth OFDMA signal with 64-QAM modulation, the amplifier consumes 950mA of total current. Nominal gain is 35dB, and 20dB gain attenuator that is activated by a CMOS-compatible voltage pin is included on-chip. Output power detection is achieved by the use of an on-chip power detector and a bias shutdown voltage shuts down the complete amplifier. Low power operation is also possible with 26dBm of linear output power at less than 2.5% EVM. The amplifier is fabricated using a proprietary 0.25um enhancement-mode pHEMT (EpHEMT) technology The complete module is packaged in a multilayer chip-on-board (MCOB) 5mm x 5mm module.

引用

页码：92 / 95

页数：4

共 13 条

[1] A 29dBm linear power amplifier module for IEEE 802.16e (Wimax) and LTE applications using E-mode pHEMT technology
Chow, Y. H.
Tee, K. G.
Rajendran, J.
Ho, S. Y.
Lee, M. H.
Chan, C. F.
Liew, Y. Y.
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT 2009), 2009, : 63 - 66
[2] A 33V broadband linear power amplifier module for IEEE 802.16e (Wimax) applications using E-mode pHEMT technology
Chow, Y. H.
Yong, C. K.
Lee, Joan
Lee, H. K.
Thor, W. Y.
Lee, K. Y.
Tan, H. T.
Liew, Y. Y.
Khoo, S. H.
2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 268 - 271
[3] A 3.3V broadband linear power amplifier module for IEEE 802.16e (Wimax) applications using E-mode pHEMT technology
Chow, Y. H.
Yong, C. K.
Lee, Joan
Lee, H. K.
Thor, W. Y.
Lee, K. Y.
Tan, H. T.
Liew, Y. Y.
Khoo, S. H.
2007 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2007, : 1185 - 1188
[4] A 3.3V broadband linear power amplifier module for IEEE 802.16e (Wimax) applications using E-mode pHEMT technology
Chow, Y. H.
Yong, C. K.
Lee, Joan
Lee, H. K.
Thor, W. Y.
Lee, K. Y.
Tan, H. T.
Liew, Y. Y.
Khoo, S. H.
2007 EUROPEAN CONFERENCE ON WIRELESS TECHNOLOGIES, 2007, : 229 - 232
[5] A variable supply, (2.3-2.7)GHz linear power amplifier module for IEEE 802.16e and LTE applications using E-mode pHEMT technology
Chow, Y. H.
Yong, C. K.
Lee, Joan
Lee, H. K.
Rajendran, J.
Khoo, S. H.
Soo, M. L.
Chan, C. F.
2008 IEEE MTT-S International Microwave Symposium Digest, Vols 1-4, 2008, : 1133 - 1136
[6] A 29dBm Linear Output Power Amplifier with 21.3% Efficiency for 700MHz-band 3GPP LTE OFDMA applications
Chow, Y. H.
Nyeo, H. H.
Chan, W. C.
Lau, K. L.
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2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010, : 1060 - 1063
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Kong, Sunwoo
Park, Bonghyuk
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2018 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2018, : 257 - 258
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Kim, Kwang-Seon
Lee, Kwang Chun
Park, Bonghyuk
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MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2019, 61 (07) : 1706 - 1711
[9] Design of a 28-GHz Low Noise Amplifier using 0.15-um InGaAs pHEMT E-mode technology
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Kim, Cheol Ho
Park, Bonghyuk
2017 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2017, : 199 - 201
[10] A Ku-band Cascode Low Noise Amplifier using InGaAs E-mode 0.15-um pHEMT Technology
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