Electrothermal characteristics of strained-Si MOSFETs in high-current operation

被引：9

作者：

Choi, CH ^{[1
]}

Chun, JH ^{[1
]}

Dutton, RW ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 11期

关键词：

bipolar current gain; device simulation; electrostatic discharge (ESD); fullband Monte Carlo simulation; phonon mean-free-path; self-heating problem; SiGe; strained-Si MOS;

D O I：

10.1109/TED.2004.836542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrothermal characteristics of strained-Si MOSFETs, operating in the high-current regime have been studied using device simulation. The phonon mean-free-path of strained-Si devices in the presence of high electric fields is determined based on fullband Monte Carlo device simulation. Strained-Si nMOS devices have higher bipolar-current gain and impact ionization rates compared to bulk-Si nMOS devices due to the smaller energy bandgap and longer phonon rnean-free-path. Even though strained-Si devices have self-heating problems due to the lower thermal conductivity of the buried SiGe layer, the devices can be used beneficially for electrostatic discharge protection devices to achieve lower holding voltage (V-h) and higher second breakdown triggering current (I-t2), compared to those of bulk-Si devices, owing to the high bipolar current gain and current uniformity.

引用

页码：1928 / 1931

页数：4

共 13 条

[1] Amerasekera A., 1995, ESD SILICON INTEGRAT
[2] [Anonymous], 2002, MEDICI 2 DIM DEV SIM
[3] CHOI CH, 1998, P SISPAD, P304
[4] Band offset induced threshold variation in strained-Si nMOSFETs
Goo, JS
Xiang, Q
Takamura, Y
Arasnia, F
Paton, EN
Besser, P
Pan, J
Lin, MR
[J]. IEEE ELECTRON DEVICE LETTERS, 2003, 24 (09) : 568 - 570
[5] Hoyt JL, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P23, DOI 10.1109/IEDM.2002.1175770
[6] Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices
Huxtable, ST
Abramson, AR
Tien, CL
Majumdar, A
LaBounty, C
Fan, X
Zeng, GH
Bowers, JE
Shakouri, A
Croke, ET
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (10) : 1737 - 1739
[7] Jungemann C, 1999, IEICE T ELECTRON, VE82C, P870
[8] A PHYSICALLY BASED MOBILITY MODEL FOR NUMERICAL-SIMULATION OF NONPLANAR DEVICES
LOMBARDI, C
MANZINI, S
SAPORITO, A
VANZI, M
[J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1988, 7 (11) : 1164 - 1171
[9] ELECTRON VISCOSITY EFFECTS ON ELECTRON-DRIFT VELOCITY IN SILICON MOS INVERSION-LAYERS
OHNO, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (08) : 1889 - 1894
[10] RIM K, 2001, P 7 3 ISSC, P116

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