Low frequency noise suppression in III-V Hall magnetic microsystems with integrated switches

被引：4

作者：

Kerlain, Alexandre ^{[1
]}

Mosser, Vincent ^{[1
]}

机构：

[1] Itron France, F-92240 Malakoff, France

来源：

SENSOR LETTERS | 2007年 / 5卷 / 01期

关键词：

Hall sensor; low frequency noise; spinning current; HEMT; excess noise; GaAs; switches; leakage current; magnetic sensor;

D O I：

10.1166/sl.2007.056

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

We propose in this paper an integrated low frequency noise reduction solution based on the spinning current method in order to improve the noise characteristics of AlGaAs/InGaAs/GaAs Quantum Well Hall Sensors (QWHS). A switching circuit is implemented on the same chip. A noise reduction of 30 dB is obtained around 1 Hz. Although this result is very encouraging, the residual noise is larger than the expected thermal noise floor in 8 mu m devices. This is shown to be correlated with switches leakage currents. For comparison, hybrid microsystems using a discrete QWHS and CMOS switches are shown to have a record noise level of 30 nT/root Hz at 1 Hz at room temperature.

引用

页码：192 / 195

页数：4

共 11 条

[1]

BAKKER A, 1999, P EUROSENSORS, V13, P1045

[2] INFLUENCE OF THE GATE LEAKAGE CURRENT ON THE NOISE PERFORMANCE OF MESFETS AND MODFETS [J].