Deposition and characterization of ZrTiO4 thin films

被引：15

作者：

Pandolfi, L ^{[1
]}

Kaciulis, S ^{[1
]}

Padeletti, G ^{[1
]}

Cusmà, A ^{[1
]}

Viticoli, M ^{[1
]}

机构：

[1] CNR, Inst Study Nanostructured Mat, I-00016 Rome, Italy

来源：

SURFACE AND INTERFACE ANALYSIS | 2004年 / 36卷 / 08期

关键词：

XPS; depth profiling; MOCVD; zirconia; titanate; thin film;

D O I：

10.1002/sia.1865

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of zirconium titanate ZrTiO4 (ZT) were prepared by the MOCVD technique. ZT layers were deposited in air on silicon substrates by using a non-conventional MOCVD system. The chemical composition of these films was investigated by XPS. More information on the thin film structure was obtained from the study of the Zr 3d XPS signal. The temperature of the substrate was found to be a fundamental parameter determining the stoichiometry of the films. It influences also the ordered or disordered structure of the films produced. In addition, the surface roughness of the samples before and after Ar+ ion sputtering was investigated. Copyright (C) 2004 John Wiley Sons, Ltd.

引用

页码：1159 / 1162

页数：4

共 6 条

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