Spectra of differential gain and linewidth enhancement factor in InGaAsN/GaAs single quantum well structures

被引：2
作者：
Wartak, M. S. [1 ]
Weetman, P. [1 ]
机构：
[1] Wilfrid Laurier Univ, Dept Phys & Comp Sci, Waterloo, ON N2L 3C5, Canada
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 07期
关键词：
D O I：
10.1002/pssa.200622318
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The differential gain and linewidth enhancement factor (alpha -factor) of a new material system InGaAsN/ GaAs is studied using the 10-band k center dot p Hamiltonian matrix. A self-consistent scheme which involves simultaneous solution of the Schrodinger and Poisson equations is applied. It is shown that spectra of differential gain and alpha-factor have significant variation versus nitrogen composition and carrier density. The determined parameters and their variations play important role in designing practical structures based on InGaAsN/GaAs material system. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：2487 / 2494
页数：8
相关论文
共 22 条
[1]  
AHH D, 1996, IEEE J QUANTUM ELECT, V32, P960
[2]   THE THEORY OF STRAINED-LAYER QUANTUM-WELL LASERS WITH BANDGAP RENORMALIZATION [J].
AHN, D ;
CHUANG, SL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :350-365
[3]   Design considerations for 1.3μm emission of GaInNAs/GaAs strained quantum-well lasers [J].
Alexandropoulos, D ;
Adams, MJ .
IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (02) :105-109
[4]   Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum well lasers [J].
Alexandropoulos, D ;
Adams, MJ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) :3523-3536
[5]  
Chuang S. L., 1995, PHYS OPTOELECTRONIC
[6]   Gain in 1.3 μm materials:: InGaNAs and InGaPAs semiconductor quantum-well lasers [J].
Hader, J ;
Koch, SW ;
Moloney, JV ;
O'Reilly, EP .
APPLIED PHYSICS LETTERS, 2000, 77 (05) :630-632
[7]   Microscopic theory of gain, absorption, and refractive index in semiconductor laser materials influence of conduction-band nonparabolicity and Coulomb-induced intersubband coupling [J].
Hader, J ;
Moloney, JV ;
Koch, SW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (12) :1878-1886
[8]   GaInNAs: A novel material for long-wavelength semiconductor lasers [J].
Kondow, M ;
Kitatani, T ;
Nakatsuka, S ;
Larson, MC ;
Nakahara, K ;
Yazawa, Y ;
Okai, M ;
Uomi, K .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :719-730
[9]   GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].
Kondow, M ;
Uomi, K ;
Niwa, A ;
Kitatani, T ;
Watahiki, S ;
Yazawa, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275
[10]  
MORCOC H, 1999, NITRIDE SEMICONDUCTO
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