Transparent conductive tungsten-doped tin oxide thin films synthesized by sol-gel technique on quartz glass substrates

被引：41
|
作者：
Huang, Yanwei [1 ]
Li, Dezeng [2 ]
Feng, Jiahan [1 ]
Li, Guifeng [1 ]
Zhang, Qun [1 ]
机构：
[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
[2] Tongji Univ, Pohl Inst Solid State Phys, Shanghai 200092, Peoples R China
来源：
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2010年 / 54卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Transparent conductive oxide (TCO); Tungsten-doped tin oxide; Thin films; Sol-gel technique; OPTICAL-PROPERTIES; THERMAL COLORATION; STATES;
D O I：
10.1007/s10971-010-2182-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Transparent conductive tungsten-doped tin oxide (SnO2:W) thin films were synthesized on quartz glass substrates by sol-gel dip-coating method. It was found that the films were highly transparent and the average optical transmission was about 90% in the visible and near infrared region from 400 to 2,500 nm. The optical band gap is about 4.1 eV. The lowest resistivity of 5.8 x 10(-3) ohm cm was obtained, with the carrier mobility of 14.2 cm(2) V-1 s(-1) and carrier concentration of 7.6 x 10(19) cm(-3) in 3 at.% W-doping films annealed at 850 A degrees C in air. The structural properties, surface morphology and chemical states for the films were investigated.
引用
收藏
页码：276 / 281
页数：6
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