Transparent conductive tungsten-doped tin oxide thin films synthesized by sol-gel technique on quartz glass substrates

被引：41

作者：

Huang, Yanwei ^{[1
]}

Li, Dezeng ^{[2
]}

Feng, Jiahan ^{[1
]}

Li, Guifeng ^{[1
]}

Zhang, Qun ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

[2] Tongji Univ, Pohl Inst Solid State Phys, Shanghai 200092, Peoples R China

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2010年 / 54卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Transparent conductive oxide (TCO); Tungsten-doped tin oxide; Thin films; Sol-gel technique; OPTICAL-PROPERTIES; THERMAL COLORATION; STATES;

D O I：

10.1007/s10971-010-2182-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transparent conductive tungsten-doped tin oxide (SnO2:W) thin films were synthesized on quartz glass substrates by sol-gel dip-coating method. It was found that the films were highly transparent and the average optical transmission was about 90% in the visible and near infrared region from 400 to 2,500 nm. The optical band gap is about 4.1 eV. The lowest resistivity of 5.8 x 10(-3) ohm cm was obtained, with the carrier mobility of 14.2 cm(2) V-1 s(-1) and carrier concentration of 7.6 x 10(19) cm(-3) in 3 at.% W-doping films annealed at 850 A degrees C in air. The structural properties, surface morphology and chemical states for the films were investigated.

引用

页码：276 / 281

页数：6