INVESTIGATIONS OF INTERFACE PROPERTIES IN COPPER-SILICON CARBIDE COMPOSITES

被引：12

作者：

Chmielewski, M. ^{[1
]}

Pietrzak, K. ^{[1
]}

Strojny-Nedza, A. ^{[1
]}

Jarzabek, D. ^{[2
]}

Nosewicz, S. ^{[2
]}

机构：

[1] Inst Elect Mat Technol, 133 Wolczynska Str, PL-01919 Warsaw, Poland

[2] Polish Acad Sci, Inst Fundamental Technol Res, 5B Pawinskiego, PL-02106 Warsaw, Poland

来源：

ARCHIVES OF METALLURGY AND MATERIALS | 2017年 / 62卷 / 02期

关键词：

copper matrix composites; silicon carbide; interface; thermal conductivity; adhesion; CU;

D O I：

10.1515/amm-2017-0200

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

This paper analyses the technological aspects of the interface formation in the copper-silicon carbide composite and its effect on the material's microstructure and properties. Cu-SiC composites with two different volume content of ceramic reinforcement were fabricated by hot pressing (HP) and spark plasma sintering (SPS) technique. In order to protect SiC surface from its decomposition, the powder was coated with a thin tungsten layer using plasma vapour deposition (PVD) method. Microstructural analyses provided by scanning electron microscopy revealed the significant differences at metal-ceramic interface. Adhesion force and fracture strength of the interface between SiC particles and copper matrix were measured. Thermal conductivity of composites was determined using laser flash method. The obtained results are discussed with reference to changes in the area of metal-ceramic boundary.

引用

页码：1315 / 1318

页数：4

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