Enhanced electroluminescence from Ge-on-Si by precise in-situ doping and post-annealing

被引：5

作者：

Yamada, Kodai ^{[1
]}

Wagatsuma, Youya ^{[1
]}

Okada, Kazuya ^{[1
]}

Hoshi, Yusuke ^{[1
]}

Sawano, Kentarou ^{[1
]}

机构：

[1] Tokyo City Univ, Adv Res Labs, Setagaya Ku, 8-15-1 Todoroki, Tokyo 1580082, Japan

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 04期

关键词：

Germanium; Electroluminescence; in-situ doping; GOS;

D O I：

10.35848/1882-0786/abf0df

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We obtain strong room-temperature electroluminescence (EL) from a Ge epitaxially grown on a Si. The epitaxial Ge is in situ doped with Boron and Phosphorous by low-temperature growth, allowing for precisely controlled p-i-n structures. Also Phosphorus delta-doping is performed at the surface, resulting in low-resistivity Ohmic contacts. Vertical-type mesa-defined diodes are fabricated and an excellent rectifying property with an on/off ratio over 10(5) is obtained, leading to the strong EL. It is remarkable that the post-growth-annealing drastically enhances the EL intensity, indicating that the Ge-on-Si is a promising high-efficiency light source on the Si platform.

引用

页数：4

共 19 条

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