A study on influence of micropipes in SiC substrate on overgrown AlGaN/GaN HEMT DC characteristics

被引：0
|
作者：
Bang, Hyungjin [1 ]
Mitani, Takeshi [1 ]
Sazawa, Hiroyuki [2 ]
Nakashima, Shinichi [1 ]
Hirata, Koji [2 ]
Kosaki, Masayoshi [2 ]
Okumura, Hajime [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Umezono 1-1-1,Cent 2, Tsukuba, Ibaraki 3058568, Japan
[2] R&D Assoc Future Elect Devices, Tokyo, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期
关键词：
D O I：
10.1002/pssc.200674278
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A deterioration mechanism of DC characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated around hollow cores that extend from micropipes in SiC substrates was studied. Various sizes of hollow cores were investigated to study the influence of size dependence. Prominent deterioration of the DC characteristics of HEMTs fabricated in the vicinity of hollow cores with a diameter of 5 pin was observed, while no major deterioration was observed for HEMTs fabricated around hollow cores whose diameters were 1.5 and 3 mu m. Clear correlation between the size of hollow cores and free carrier densities at the peripheries of the cores was observed using micro-Raman imaging. The high density of free carriers around relatively large hollow cores causes deterioration of the DC characteristics of HEMTs fabricated in the vicinity of hollow cores. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1662 / +
页数：2
相关论文
共 50 条
  • [1] Influence of macro defects in SiC substrate on AlGaN/GaN HEMT DC characteristics
    Sazawa, H.
    Mitani, T.
    Bang, H.
    Hirata, K.
    Kosaki, M.
    Furuta, K.
    Tsuchiya, T.
    Hikosaka, K.
    Nakashima, S.
    Okumura, H.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2321 - 2324
  • [2] Correlation between micropipes on SiC substrate and dc characteristics of AlGaN/GaN high-electron mobility transistors
    Bang, Hyungjin
    Mitani, Takeshi
    Nakashima, Shinichi
    Sazawa, Hiroyuki
    Hirata, Koji
    Kosaki, Masayoshi
    Okumura, Hajime
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)
  • [3] Correlation between micropipes on SiC substrate and dc characteristics of AlGaN/GaN high-electron mobility transistors
    Bang, Hyungjin
    Mitani, Takeshi
    Nakashima, Shinichi
    Sazawa, Hiroyuki
    Hirata, Koji
    Kosaki, Masayoshi
    Okumura, Hajime
    Journal of Applied Physics, 2006, 100 (11):
  • [4] Influence of micropipe and domain boundary in SiC substrate on the DC characteristics of AlGaN/GaN HFET
    Sazawa, H.
    Kato, T.
    Kojima, K.
    Furuta, K.
    Hirata, K.
    Kosaki, M.
    Kinoshita, M.
    Mitani, T.
    Nakashima, S.
    Okumura, H.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 1043 - +
  • [5] Growth and Fabrication of AlGaN/GaN HEMT on SiC Substrate
    Wong, Yuen-Yee
    Chiu, Yu-Sheng
    Luong, Tien-Tung
    Lin, Tai-Ming
    Ho, Yen-Teng
    Lin, Yue-Chin
    Chang, Edward Yi
    2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE), 2012, : 729 - 732
  • [6] DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT
    Touati, Zine-eddine
    Hamaizia, Zahra
    Messai, Zitouni
    2015 4TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 2015, : 115 - U850
  • [7] Thermal analysis and measuring of AlGaN/GaN HEMT grown on SiC substrate
    Ren, Chunjiang
    Chen, Tangsheng
    Jiao, Gang
    Li, Xiao
    Xue, Fangshi
    Li, Fuxiao
    Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 2007, 27 (04): : 476 - 480
  • [8] Effect of passivation films on DC characteristics of AlGaN/GaN HEMT
    Ohi, S.
    Kakegami, T.
    Tokuda, H.
    Kuzuhara, M.
    2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2014,
  • [9] AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers
    T R LENKA
    A K PANDA
    Pramana, 2012, 79 : 151 - 163
  • [10] AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers
    Lenka, T. R.
    Panda, A. K.
    PRAMANA-JOURNAL OF PHYSICS, 2012, 79 (01): : 151 - 163
12345