Modeling and simulation of GaN/Al0.3Ga0.7N new multilayer nano-heterostructure

In this paper we have proposed a simple model and performed one-dimensional simulation for GaN/Al0.3Ga0.7N multi-layer new nano-heterostructure in order to obtain the energy band profile, which graphs the energy of the conduction and valence band edges versus position. Also, potential distribution has been studied throughout the modeled nano-heterostructure along with electron-hole densities and space charge densities. The total size of the sample was 288 nm grown on pseudomorph GaN including ohmic contact with the metal on edges. The quantum region is over the whole heterostructure but the interesting region in the heterostructure has been found in between 100 and 196 nm, which can be applicable for a particular device application. (C) 2010 Elsevier B.V. All rights reserved.