Parameter extraction for a physics-based circuit simulator IGBT model

被引：0

作者：

Kang, X ^{[1
]}

Santi, E ^{[1
]}

Hudgins, JL ^{[1
]}

Palmer, PR ^{[1
]}

Donlon, JF ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APEC 2003: EIGHTEENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2 | 2003年

关键词：

power semiconductor modeling; IGBT; model; parameter extraction;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A practical parameter extraction method is presented for the Fourier-based-solution physics-based IGBT model. In the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the eleven and thirteen parameters required for the NPT and PT IGBT models, respectively. Validation with experimental results from various structure IGBTs demonstrates the accuracy of the proposed IGBT model and the robustness of the parameter extraction method.

引用

页码：946 / 952

页数：7

共 50 条

[21] 4H-SiC 15kV n-IGBT physics-based sub-circuit model implemented in Simulink/Matlab [J].

Lee, Meng-Chia ;

Wang, Gangyao ;

Huang, Alex Q. .

2015 THIRTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2015), 2015, :1051-1057

[22] A Physics-Based Compact Model of SiC Junction Barrier Schottky Diode for Circuit Simulation [J].

Yin, Shan ;

Gu, Yunfei ;

Tseng, King Jet ;

Li, Juntao ;

Dai, Gang ;

Zhou, Kun .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (08) :3095-3103

[23] An Accurate NPT-IGBT SPICE Model with Simple Parameter Extraction Method [J].

Hadini, Yassine ;

Galadi, Abdelghafour ;

Echchelh, Adil .

PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ELECTRONIC ENGINEERING AND RENEWABLE ENERGY, ICEERE 2018, 2019, 519 :273-282

[24] A GPU-implemented physics-based haptic simulator of tooth drilling [J].

Razavi, M. ;

Talebi, H. A. ;

Zareinejad, M. ;

Dehghan, M. R. .

INTERNATIONAL JOURNAL OF MEDICAL ROBOTICS AND COMPUTER ASSISTED SURGERY, 2015, 11 (04) :476-485

[25] Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects [J].

Lu, Liqing ;

Bryant, Angus ;

Hudgins, Jerry L. ;

Palmer, Patrick R. ;

Santi, Enrico .

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2010, 46 (06) :2556-2567

[26] Equivalent Circuit Model and Parameter Extraction for HVPSAW [J].

Kenny, T. D. ;

da Cunha, M. Pereira .

2006 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-5, PROCEEDINGS, 2006, :363-366

[27] Novel IGBT SPICE Model with Non-destructive Parameter Extraction and Comparison with Measurements [J].

YUAN Shou cai ZHU Chang chun LIU Jun hua School of Electron and Inform Eng Xian Jiaotong University Xian CHN .

Semiconductor Photonics and Technology, 2002, (03) :157-165

[28] A Physics-based Memristor Model Based on Chalcogenide Alloy [J].

Wang, Lei ;

Yang, Ci-Hui ;

Wen, Jing ;

Peng, Yuan-Xiu .

CURRENT NANOSCIENCE, 2015, 11 (05) :676-681

[29] A physics-based earthquake simulator replicates seismic hazard statistics across California [J].

Shaw, Bruce E. ;

Milner, Kevin R. ;

Field, Edward H. ;

Richards-Dinger, Keith ;

Gilchrist, Jacquelyn J. ;

Dieterich, James H. ;

Jordan, Thomas H. .

SCIENCE ADVANCES, 2018, 4 (08)

[30] Parameter extraction for photodiode equivalent circuit model based on hybrid genetic algorithm [J].

Li, Tonghui ;

Duan, Xiaofeng ;

Liu, Kai ;

Huang, Yongqing .

MICROELECTRONICS JOURNAL, 2024, 143

← 1 2 3 4 5 →