Parameter extraction for a physics-based circuit simulator IGBT model

被引：0

作者：

Kang, X ^{[1
]}

Santi, E ^{[1
]}

Hudgins, JL ^{[1
]}

Palmer, PR ^{[1
]}

Donlon, JF ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APEC 2003: EIGHTEENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2 | 2003年

关键词：

power semiconductor modeling; IGBT; model; parameter extraction;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A practical parameter extraction method is presented for the Fourier-based-solution physics-based IGBT model. In the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the eleven and thirteen parameters required for the NPT and PT IGBT models, respectively. Validation with experimental results from various structure IGBTs demonstrates the accuracy of the proposed IGBT model and the robustness of the parameter extraction method.

引用

页码：946 / 952

页数：7

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