Tunable WSe2-CdS mixed-dimensional van der Waals heterojunction with a piezo-phototronic effect for an enhanced flexible photodetector

被引:59
作者
Lin, Pei [1 ,2 ]
Zhu, Laipan [1 ,2 ]
Li, Ding [1 ,2 ]
Xu, Liang [1 ,2 ]
Wang, Zhong Lin [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing Key Lab Micronano Energy & Sensor, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Sch Nanosci & Technol, Beijing 100049, Peoples R China
[3] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
TRANSITION-METAL DICHALCOGENIDES; ATOMIC-LAYER MOS2; MONOLAYER MOS2; SOLAR-CELLS; STRAIN; HYBRID; GENERATION;
D O I
10.1039/c8nr04376k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Due to the absence of bond fracture and atomic reconstruction under strain, vdWs structures hold great promise in flexible electronic/optoelectronic applications. Besides all-2D heterojunctions, the dangling-bond-free surfaces of 2D materials also enable vdWs interaction with other materials of different dimensionalities, forming mixed-dimensional vdWs heterostructures. Such structures allow a much broader selection of materials and may provide a promising approach to compensate for the intrinsic weakness of 2D crystals before realizing their full potential. In this study, we present the fabrication of a WSe2-CdS mixed-dimensional vdWs p-n heterojunction for flexible photodetection. A strain-tunable vdWs interface was demonstrated and the photoresponse was dramatically enhanced with the piezo-phototronic effect. The photocurrent can be increased by approximate to 110% under a compressive strain of -0.73% and the corresponding photoresponsivity reaches up to 33.4 A W-1. The enhancement originates from realigned local energy-band tilting at the WSe2-CdS interface by strain-induced piezopolarization, which promotes the transport process of photoexcited carriers. Our work provides a new route to a tunable vdWs interface other than with electrostatic gating, which may inspire the development of novel flexible vdWs optoelectronics.
引用
收藏
页码:14472 / 14479
页数:8
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