High-speed operation of static binary frequency divider using resonant tunnelling diodes and HEMTs

被引：19

作者：

Matsuzaki, H

Arai, K

Maezawa, K

Osaka, J

Yamamoto, M

Otsuji, T

机构：

[1] NTT, Syst Elect Labs, Kanagawa 24301, Japan

[2] NTT, Opt Network Syst Labs, Kanagawa 24301, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 01期

关键词：

D O I：

10.1049/el:19980103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new circuit technology using resonant tunnelling diodes and HEMTs makes the toggle frequency f(toggle) of a static binary frequency divider close to the cutoff frequency f(t) of the used 0.7 mu m-gate HEMTs. f(toggle) and f(t) are 34 and 38GHz, respectively. This technology is promising for use in high-speed logic circuits.

引用

页码：70 / 71

页数：2

共 6 条

[1]

ARAI K, 1997, IEEE ELECT DEVICE LE, V18

[2] InP-based high-performance monostable bistable transition logic elements (MOBILE's) using integrated multiple-input resonant-tunneling devices [J].