Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology

被引：10
作者：
Shabanpour, R. [1 ]
Meister, T. [1 ]
Ishida, K. [1 ]
Kheradmand-Boroujeni, B. [1 ]
Carta, C. [1 ]
Ellinger, F. [1 ]
Petti, L. [2 ,3 ]
Muenzenrieder, N. [2 ,3 ]
Salvatore, G. A. [2 ,3 ]
Troester, G. [2 ,3 ]
机构：
[1] Tech Univ Dresden, Chair Circuit Design & Network Theory, D-01062 Dresden, Germany
[2] Swiss Fed Inst Technol, Elect Lab, Zurich, Switzerland
[3] Swiss Fed Inst Technol, Wearable Comp Grp, Zurich, Switzerland
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2016年 / 87卷 / 02期
关键词：
Analog circuits; Amplifiers; High gain amplifiers; Thin film transistors; a-IGZO; Flexible electronics; SILICON; MODEL;
D O I：
10.1007/s10470-015-0655-3
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents two high-gain amplifiers fabricated in a flexible self-aligned amorphous indium gallium zinc oxide thin-film transistor (TFT) technology. One common-source amplifier relies on positive feedback to provide a voltage gain of 17 dB, and a bandwidth of 79 kHz from a dc power of only 0.76 mW. One cascode amplifier provides a voltage gain of 25 dB, and a bandwidth of 220 kHz from a dc power of 2.32 mW. The chip areas of the amplifiers are 7.5 and 10.3 mm(2), respectively. By using a gain-enhancement technique in the first amplifier, gain, dc power consumption, and chip area are greatly improved. The presented amplifiers are designed for using as audio pre-amplifiers in a radio receiver. The presented measurements confirm that the amplifiers meet the requirements for this purpose. The circuits are designed using the Verilog-A Rensselaer Polytechnic Institute-amorphous TFT model; circuit simulations are also presented for comparison with the hardware characterization. Additionally, the impact of process variations on the amplifiers is analyzed and discussed in details.
引用
收藏
页码：213 / 222
页数：10
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