Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol-gel

被引：71
作者：
Tardy, J.
Erouej, M.
Deman, A. L.
Gagnalre, A.
Teodorescu, V.
Blanchin, M. G.
Canut, B.
Barau, A.
Zaharescu, M.
机构：
[1] Ecole Cent Lyon, Lab Elect Optoelect & Microsyst, F-69134 Ecully, France
[2] Ecole Cent Lyon, GEGELY, F-69134 Ecully, France
[3] Univ Lyon 1, LPMCN, F-69621 Villeurbanne, France
[4] Natl Inst Mat Phys, Bucharest 077125, Romania
[5] Inst Phys Chem IG Murgulescu, Bucharest 060022, Romania
来源：
MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 2-3期
关键词：
D O I：
10.1016/j.microrel.2006.01.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report here on pentacene based organic field effect transistors (OFETs) with a high-k HfO2 gate oxide. HfO2 layers were prepared by two different methods: anodic oxidation and sol-gel. A comparison of the two processes on the electrical properties of OFETs is given. Ultra thin nanoporous (20 nm) sol-gel deposited oxide films were obtained following an annealing at 450 degrees C. They lead to high mobility and stable devices (mu = 0.12 cm(2)/V S). On the other hand, devices with anodic HfO2 revealed a little bit more leaky and show some hysteresis. Anodization, however, presents the advantage of being a fully room temperature process, compatible with plastic substrates. Stability and response to a bias stress are also reported. (c) 2006 Elsevier Ltd. All rights reserved.
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收藏
页码：372 / 377
页数：6
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