Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC

被引：56
作者：
Pécz, B
Tóth, L
di Forte-Poisson, MA
Vacas, J
机构：
[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
[2] THALES Res & Technol, F-91404 Orsay, France
来源：
APPLIED SURFACE SCIENCE | 2003年 / 206卷 / 1-4期
基金：
匈牙利科学研究基金会;
关键词：
SiC; transmission electron microscopy; ohmic contacts; solid phase reactions; thin films;
D O I：
10.1016/S0169-4332(02)01195-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Al (150 nm)/Ti (30 nm) contacts have been successively deposited onto p-type 6H-SiC wafers. The layer structure has been annealed at 900 degreesC for 4 min. The annealed contacts are Ohmic. The structure of the annealed contact layers was identified as a Ti3SiC2 layer on SiC and covered by an Al3Ti layer. Both layers and phases are formed as a result of solid phase interaction between the metallic layers and SiC, and are epitaxial to the 6H-SiC. Ti3SiC2 is suggested as a new contact material to p-type SiC, which promises high temperature stable contacts due to its excellent properties. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：8 / 11
页数：4
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