Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

被引：0

作者：

Pishchagin, A. A. ^{[1
]}

Voitsekhovskii, A. V. ^{[1
]}

Kokhanenko, A. P. ^{[1
]}

Serokhvostov, V. Yu ^{[1
]}

Dzyadukh, S. M. ^{[1
]}

Nikiforov, A. I. ^{[1
,2
]}

机构：

[1] Natl Res Tomsk State Univ, Tomsk 634050, Russia

[2] RAS, Rzanov Inst Semicond Phys, SB, Novosibirsk 630090, Russia

来源：

3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016) | 2016年 / 741卷

关键词：

D O I：

10.1088/1742-6596/741/1/012015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured.

引用

页数：5

共 7 条

[1] Admittance spectroscopy of Ge quantum dots in Si [J].