Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs

被引：14
|
作者：
Monga, U. [1 ]
Borli, H.
Fjeldly, T. A.
机构：
[1] UniK Univ Grad Ctr, N-2027 Kjeller, Norway
来源：
MATHEMATICAL AND COMPUTER MODELLING | 2010年 / 51卷 / 7-8期
关键词：
Device modeling; Nanoscale MOSFET; Current modeling; Subthreshold slope; Capacitance modeling; Conformal mapping;
D O I：
10.1016/j.mcm.2009.08.043
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A precise two-dimensional subthreshold current and capacitance modeling of short-channel, nanoscale double-gate MOSFETs is presented. The model covers a wide range of geometries and material combinations. The subthreshold model is based on conformal mapping techniques. The results are in excellent agreement with numerical simulations. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：901 / 907
页数：7
相关论文
共 50 条
  • [41] Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs
    Holtij, Thomas
    Graef, Michael
    Marie Hain, Franziska
    Kloes, Alexander
    Iniguez, Benjamin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (02) : 288 - 299
  • [42] A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure
    Jin, Xiaoshi
    Liu, Xi
    Kwon, Hyuck-In
    Lee, Jung-Hee
    Lee, Jong-Ho
    SOLID-STATE ELECTRONICS, 2013, 82 : 77 - 81
  • [43] Physical compact model for threshold voltage in short-channel double-gate devices
    Kim, K
    Fossum, JG
    Chuang, CT
    2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2003, : 223 - 226
  • [44] An analytical subthreshold current model for ballistic double-gate MOSFETs
    Autran, JL
    Munteanu, D
    Tintori, O
    Aubert, M
    Decarre, E
    NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, : 171 - 174
  • [45] A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs
    Chen, QA
    Harrell, EM
    Meindl, JD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (07) : 1631 - 1637
  • [46] Carrier-based compact modeling of charge and capacitance of long channel undoped symmetric double-gate MOSFETs
    He, Jin
    Bian, Wei
    Chen, Yu
    Li, Bo
    Tao, Yadong
    Wei, Yiqun
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (04)
  • [47] A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs
    Munteanu, D.
    Moreau, M.
    Autran, J. L.
    MOLECULAR SIMULATION, 2009, 35 (06) : 491 - 497
  • [48] Capacitance Modeling of Short-Channel DG and GAA MOSFETs
    Borli, H.
    Kolberg, S.
    Fjeldly, T. A.
    NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, : 745 - +
  • [49] A quasi-two-dimensional compact drain-current model for undoped symmetric double-gate MOSFETs including short-channel effects
    Lime, Francois
    Iniguez, Benjamin
    Moldovan, Oana
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (06) : 1441 - 1448
  • [50] Analytical Model of Short-Channel Double-Gate JFETs
    Chang, Jiwon
    Kapoor, Ashok K.
    Register, Leonard F.
    Banerjee, Sanjay K.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (08) : 1846 - 1855
12345