Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs

被引：14
|
作者：
Monga, U. [1 ]
Borli, H.
Fjeldly, T. A.
机构：
[1] UniK Univ Grad Ctr, N-2027 Kjeller, Norway
来源：
MATHEMATICAL AND COMPUTER MODELLING | 2010年 / 51卷 / 7-8期
关键词：
Device modeling; Nanoscale MOSFET; Current modeling; Subthreshold slope; Capacitance modeling; Conformal mapping;
D O I：
10.1016/j.mcm.2009.08.043
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A precise two-dimensional subthreshold current and capacitance modeling of short-channel, nanoscale double-gate MOSFETs is presented. The model covers a wide range of geometries and material combinations. The subthreshold model is based on conformal mapping techniques. The results are in excellent agreement with numerical simulations. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：901 / 907
页数：7
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