Microdefects in semiconductor single crystals revealed by X-ray diffuse scattering method

被引：0
作者：
Chtcherbatchev, KD [1 ]
Bublik, VT [1 ]
机构：
[1] Moscow Steel & Alloys Inst, Moscow 117936, Russia
来源：
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997 | 1998年 / 160卷
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D O I：
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The x-ray diffuse scattering (XRDS) from microdefects (MD) formed in the bulk of semiconductor single crystals was investigated using a triple crystal diffractometer. The measurements of the XRDS distribution in close vicinity of a reciprocal lattice point makes it possible to reveal in some cases a simultaneous presence of the microdefects with vacansionic and interstitial type of dilatation. MD identification procedure is described fbr a Si-doped HB-GaAs single crystal.
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页码：187 / 190
页数：4
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