Role of rapid photothermal processing in environmentally conscious semiconductor manufacturing

被引:2
作者
Sharangpani, R
Singh, R
机构
[1] Clemson Univ, Dept Elect & Comp Engn, Clemson, SC 29634 USA
[2] Clemson Univ, Mat Sci & Engn Lab, Clemson, SC 29634 USA
关键词
D O I
10.1557/JMR.1998.0009
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Compliance with the increasingly stringent environmental laws will force the phasing out of conventional methods for the manufacture of all semiconductor devices. Development of processes with the highest possible material and energy efficiencies is the heart of the present ecological preservation efforts. Besides other benefits, rapid isothermal processing (RIP) also uses less energy than furnace processing. Further increase of material and energy efficiencies is possible by using rapid photothermal processing. Central to this method is the use of quantum photoeffects in conventional RIP systems. This approach can be consolidated with advanced chemical vapor deposition methods that further lower the wastages leading to systems that can give significant improvements over those presently used. Key experimental results and possible future directions are presented.
引用
收藏
页码:61 / 67
页数:7
相关论文
共 20 条
[1]  
ALLEN DT, 1992, MAT RES SOC B, V30
[2]  
KMIRK J, COMMUNICATION
[3]  
NEWBOE B, 1993, SEMICOND INT, V50
[4]  
ROSENBAUM L, COMMUNICATION
[5]  
*SEM IND ASS, 1994, NAT TECHN ROADM SEM, P66
[6]   A computerized direct liquid injection, rapid isothermal processing assisted chemical vapor deposition system for a Teflon amorphous fluoropolymer [J].
Sharangpani, R ;
Singh, R .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1997, 68 (03) :1564-1570
[7]   Importance of high energy photons in the curing of spin-on low dielectric constant interconnect materials [J].
Sharangpani, R ;
Cherukuri, KC ;
Singh, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (02) :669-673
[8]   Chemical vapor deposition and characterization of amorphous teflon fluoropolymer thin films [J].
Sharangpani, R ;
Singh, R ;
Drews, M ;
Ivey, K .
JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (04) :402-409
[9]  
SHARANGPANI R, 1997, P 3 DIEL ULSI VLSI M
[10]  
SINGER P, 1993, SEMICOND INT, V92