Fabrication and Characterization of Ferroelectric Poly(vinylidene fluoride-tetrafluoroethylene) Gate Field-Effect Transistor Memories

被引：14

作者：

Watanabe, Tomohiro ^{[1
]}

Miyashita, Hiroyuki ^{[1
]}

Kanashima, Takeshi ^{[1
]}

Okuyama, Masanori ^{[1
,2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Syst Innovat, Osaka 5608531, Japan

[2] Osaka Univ, Inst NanoSci Design, Toyonaka, Osaka 5608531, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

FILMS;

D O I：

10.1143/JJAP.49.04DD14

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic ferroelectric gate field-effect transistor (FET) memories have been fabricated using pentacene as the semiconductor and a poly(vinylidene fluoride-tetrafluoroethylene) [P(VDF-TeFE)] thin film as the ferroelectric gate. The P(VDF-TeFE) film is prepared by spin coating and annealing at 170 degrees C for 2.5 h, and pentacene is prepared by vacuum evaporation. The polarization-electric field (P-E) hysteresis of the P(VDF-TeFE) thin film is observed and enhanced by poling treatment. The obtained P-r of 4 mu C/cm(2) is sufficient for controlling pentacene surface potential. Good memory characteristics are obtained in the P(VDF-TeFE) gate FET. For such a FET, the ON/OFF ratio of drain current is 830, the carrier mobility is 0.11 cm(2) V-1 s(-1), and the memory retention is over 16 h. (C) 2010 The Japan Society of Applied Physics

引用

页数：5

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