Thermal oxidation of AlGaAs: Modeling and process control

被引：18
作者：
Ku, PC [1 ]
Chang-Hasnain, CJ [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2003年 / 39卷 / 04期
基金：
美国国家科学基金会;
关键词：
material science and technology; oxidation; oxide structure; semiconductor process modeling; surface-emitting lasers;
D O I：
10.1109/JQE.2003.809340
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple physical model is developed for the thermal oxidation process of AlGaAs using the continuity equation. The model is based on the principle of oxidant mass conservation. Theoretical calculations are compared with experimental data to a good agreement. The model is then applied to the study of VCSEL batch fabrication. Several control parameters are discussed including AlGaAs layer thickness, aluminum composition, initial mesa size, spacing between two adjacent devices, oxidation time, and oxidation temperature.
引用
收藏
页码：577 / 585
页数：9
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