Continuous wave milliwatt power AlGaN light emitting diodes at 280 nm

被引：73
作者：
Sun, WH
Adivarahan, V
Shatalov, M
Lee, YB
Wu, S
Yang, JW
Zhang, JP
Khan, MA [1 ]
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] Sensor Elect Technol Inc, Columbia, SC 29209 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 11A期
关键词：
AlGaN; quantum well; ultraviolet; light emitting diode;
D O I：
10.1143/JJAP.43.L1419
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on deep ultraviolet light emitting diodes using AlGaN multiple quantum well active regions and with peak emission at 280nm. A new buffer layer and active region design resulted in flip-chip devices with continuous wave powers as high as 0.85mW for a pump current of 20mA and a record external quantum efficiency over 1%. The power saturated at 5mW for a dc pump current of 200mA.
引用
收藏
页码：L1419 / L1421
页数：3
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